Thin film transistor substrate

摘要

A thin film transistor substrate including a thin film transistor and a capacitor formed of a pair of electrodes, which includes: a first electrode above a substrate; a first insulating film above the first electrode; a second electrode above the first insulating film; a second insulating film above the second electrode; and a semiconductor layer above the second insulating film, in which the capacitor includes the first electrode as one of the pair of electrodes and the second electrode as the other of the pair of electrodes, and the thin film transistor includes the second electrode as a gate electrode, the second insulating film as a gate insulating film, and the semiconductor layer as a channel layer.

主权项

1. A thin film transistor substrate including a thin film transistor and a capacitor formed of a pair of electrodes, the thin film transistor substrate comprising:
a first electrode above a substrate; a first insulating film above the first electrode; a second electrode above the first insulating film; a second insulating film above the second electrode; a semiconductor layer above the second insulating film; and a source electrode and a drain electrode, each at least partially above the semiconductor layer, wherein the capacitor includes the first electrode as one of the pair of electrodes and the second electrode as an other of the pair of electrodes, the thin film transistor includes the second electrode as a gate electrode, the second insulating film as a gate insulating film, the semiconductor layer as a channel layer, and the source electrode and the drain electrode, one of the source electrode and the drain electrode is directly connected to the first electrode, and a first interconnecting layer of the thin film transistor includes only the first electrode, with the first electrode comprising a continuous layer which is directly connected to the one of source electrode and the drain electrode.