Semiconductor device and method of providing z-interconnect conductive pillars with inner polymer core

摘要

A semiconductor device is made by providing a sacrificial substrate and depositing an adhesive layer over the sacrificial substrate. A first conductive layer is formed over the adhesive layer. A polymer pillar is formed over the first conductive layer. A second conductive layer is formed over the polymer pillar to create a conductive pillar with inner polymer core. A semiconductor die or component is mounted over the substrate. An encapsulant is deposited over the semiconductor die or component and around the conductive pillar. A first interconnect structure is formed over a first side of the encapsulant. The first interconnect structure is electrically connected to the conductive pillar. The sacrificial substrate and adhesive layers are removed. A second interconnect structure is formed over a second side of the encapsulant opposite the first interconnect structure. The second interconnect structure is electrically connected to the conductive pillar.

主权项

1. A method of making a semiconductor device, comprising:
providing a first conductive layer; forming a plurality of polymer pillars over the first conductive layer; forming a second conductive layer over the polymer pillars to form a plurality of conductive z-interconnect structures; and disposing a semiconductor die between the conductive z-interconnect structures and contacting the first conductive layer.