发明名称 |
Cup-like getter scheme |
摘要 |
The present disclosure relates to a method of gettering that provides for a high efficiency gettering process by increasing an area in which a getter layer is deposited, and an associated apparatus. In some embodiments, the method is performed by providing a substrate into a processing chamber having one or more residual gases. A cavity is formed within a top surface of the substrate. The cavity has a bottom surface and sidewalls extending from the bottom surface to the top surface. A getter layer, which absorbs the one or more residual gases, is deposited over the substrate at a position extending from the bottom surface of the cavity to a location on the sidewalls. By depositing the getter layer to extend to a location on the sidewalls of the cavity, the area of the substrate that is able to absorb the one or more residual gases is increased. |
申请公布号 |
US9637378(B2) |
申请公布日期 |
2017.05.02 |
申请号 |
US201314023572 |
申请日期 |
2013.09.11 |
申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
Chan Chih-Jen;Tseng Lee-Chuan;Lin Shih-Wei;Chang Che-Ming;Chou Chung-Yen;Hsieh Yuan-Chih |
分类号 |
B81B7/02;B81B1/00;B81C1/00;H01L23/26 |
主分类号 |
B81B7/02 |
代理机构 |
Eschweiler & Potashnik, LLC |
代理人 |
Eschweiler & Potashnik, LLC |
主权项 |
1. A MEMs (microelectromechanical system) structure, comprising:
a substrate comprising a first cavity having a bottom surface and sidewalls extending from the bottom surface to an upper surface of the substrate; one or more bonding structures disposed onto the upper surface of the substrate at locations set back from the first cavity; a first getter layer disposed onto the substrate at a position extending from the bottom surface to a location overlying the upper surface of the substrate; and a device wafer comprising a MEMs device affixed to the substrate by the one or more bonding structures, wherein the device wafer comprises a second cavity separated from the first cavity by a MEMs substrate, a second getter layer disposed onto sidewalls and a horizontal surface of the second cavity. |
地址 |
Hsin-Chu TW |