| 发明名称 | Semiconductor device and manufacturing method therefor | ||
| 摘要 | A semiconductor device comprises: a semiconductor device active region; an electrode shape controlling layer disposed on the semiconductor device active region, the electrode shape controlling layer containing aluminum, the content of aluminum being changed in a direction from bottom to up from the semiconductor device active region, an electrode region being disposed on the electrode shape controlling layer, a groove extended toward the semiconductor device active region and penetrating through the electrode shape controlling layer longitudinally being disposed in the electrode region, all or part of a side surface of the groove having a shape corresponding to the content of aluminum in the electrode shape controlling layer; and an electrode disposed in the groove in the electrode region entirely or partially, the electrode having a shape matching with the shape of the groove, a bottom portion of the electrode being contacted with the semiconductor device active region. | ||
| 申请公布号 | US9640624(B2) | 申请公布日期 | 2017.05.02 |
| 申请号 | US201414896364 | 申请日期 | 2014.01.06 |
| 申请人 | ENKRIS SEMICONDUCTOR, INC. | 发明人 | Cheng Kai |
| 分类号 | H01L29/40;H01L29/66;H01L29/778;H01L29/868;H01L29/872;H01L29/20;H01L21/283;H01L21/31;H01L21/311;H01L21/3213;H01L29/417;H01L29/423;H01L29/78;H01L29/861;H01L29/41;H01L21/768 | 主分类号 | H01L29/40 |
| 代理机构 | Flener IP Law | 代理人 | Flener Zareefa B.;Flener IP Law |
| 主权项 | 1. A semiconductor device, comprising: a semiconductor device active region; an electrode shape controlling layer disposed on the semiconductor device active region, the electrode shape controlling layer containing aluminum, the content of aluminum in all or part of the electrode shape controlling layer being changed in a direction from bottom to up from the semiconductor device active region; an electrode region disposed on the electrode shape controlling layer, the electrode region including a groove extended toward the semiconductor device active region and penetrating through the electrode shape controlling layer longitudinally, all or part of a side surface of the groove having a shape corresponding to the content of aluminum in the electrode shape controlling layer; and an electrode disposed in the groove in the electrode region entirely or partially, the electrode having a shape matching with the shape of the groove, a bottom portion of the electrode being contacted with the semiconductor device active region. | ||
| 地址 | Suzhou CN | ||