| 发明名称 | Stacked metal oxide semiconductor (MOS) and metal oxide metal (MOM) capacitor architecture | ||
| 摘要 | A device includes a first stacked capacitor comprising a first MOS capacitance and a first MOM capacitance, the first MOS capacitance coupled to a first node, the first node configured to receive a first bias voltage, and a second stacked capacitor comprising a second MOS capacitance and a second MOM capacitance, the second MOS capacitance coupled to the first node. | ||
| 申请公布号 | US9640532(B2) | 申请公布日期 | 2017.05.02 |
| 申请号 | US201414476086 | 申请日期 | 2014.09.03 |
| 申请人 | Qualcomm Incorporated | 发明人 | Gathman Timothy Donald |
| 分类号 | H01L27/06;H01L27/08;H01L29/94;H01L29/93;H03K17/687 | 主分类号 | H01L27/06 |
| 代理机构 | Smith Tempel Blaha LLC | 代理人 | Smith Tempel Blaha LLC |
| 主权项 | 1. A device, comprising: a first stacked capacitor comprising a first MOS capacitance and a first MOM capacitance, the first MOS capacitance coupled between an input node and a first node, the first node configured to receive a first bias voltage, wherein the first MOS capacitance comprises a first MOS varactor having a source and a drain coupled together; and a second stacked capacitor comprising a second MOS capacitance and a second MOM capacitance, the second MOS capacitance coupled between an output node and the first node, wherein the second MOS capacitance comprises a second MOS varactor having a source and a drain coupled together, and wherein a capacitance of the device is provided between the input node and the output node. | ||
| 地址 | San Diego CA US | ||