主权项 |
1. A semiconductor device comprising:
a semiconductor substrate including a main surface; a protruding portion that is a portion of the semiconductor substrate, protrudes from the main surface, has a width in a first direction of the main surface, and extends in a second direction perpendicular to the first direction in plan view, a first gate electrode and a second gate electrode which are arranged over the protruding portion and extend in the first direction in plan view; and a first stripe contact, a second stripe contact and a third stripe contact which are arranged over the protruding portion and extend in the first direction in plan view; wherein the first gate electrode is located between the first stripe contact and the second stripe contact, wherein the second gate electrode is located between the second stripe contact and the third stripe contact, wherein the second stripe contact is located between the first gate electrode and the second gate electrode, wherein the second gate electrode, the second stripe contact, the third stripe contact and a protruding portion of the semiconductor substrate are used so as to form a conductive transistor such that the second stripe contact is connected to either a source or a drain of the conductive transistor and the third stripe contact is connected to the other of the conductive transistor, wherein the first gate electrode is used as a first dummy gate electrode, wherein a first metal extends along the second direction and over the first dummy gate electrode, and is electrically connected to the first stripe contact and the second stripe contact, and wherein a first pad is electrically connected to the first metal via the first stripe contact. |