Conformal doping in 3D si structure using conformal dopant deposition

摘要

Embodiments described herein generally relate to doping of three dimensional (3D) structures on a substrate. In one embodiment, a conformal dopant containing film may be deposited over the 3D structures. Suitable dopants that may be incorporated in the film may include boron, phosphorous, and other suitable dopants. The film may be subsequently annealed to diffuse the dopants into the 3D structures.

主权项

1. A substrate processing method, comprising:
depositing a conformal film consisting of boron, carbon, and nitrogen by a combination of a thermal chemical vapor deposition process and a plasma deposition process on a three dimensional structure formed on a substrate, wherein the three dimensional structure is a silicon containing FinFET device; and annealing the three dimensional structure and the film to diffuse the boron into the three dimensional structure to dope the FinFET device.