发明名称 |
Power module |
摘要 |
A power module has a copper layer composed of copper or a copper alloy on a surface of a circuit layer to which a semiconductor device is bonded, and a solder layer that is formed by using a solder material is formed between the circuit layer and the semiconductor device. An average crystal grain size which is measured by EBSD measurement in a region having a thickness of up to 30 μm from the surface of the circuit layer in the solder layer is 10 μm or less, the solder layer has a composition that contains Sn as a main component, 0.01 to 1.0% by mass of Ni, and 0.1 to 5.0% by mass of Cu, and a thermal resistance increase rate when a power cycle is loaded 100,000 times is less than 10% in a power cycle test. |
申请公布号 |
US9642275(B2) |
申请公布日期 |
2017.05.02 |
申请号 |
US201314654199 |
申请日期 |
2013.12.20 |
申请人 |
MITSUBISHI MATERIALS CORPORATION |
发明人 |
Ohashi Touyou;Nagatomo Yoshiyuki;Nagase Toshiyuki;Kuromitsu Yoshirou |
分类号 |
H05K7/02;B23K35/26;C22C13/00;H01L23/00;H01L23/373;H01L23/488;B23K35/30;B23K35/02;B32B15/01;B23K101/40;B23K101/42;H01L23/473 |
主分类号 |
H05K7/02 |
代理机构 |
Locke Lord LLP |
代理人 |
Locke Lord LLP |
主权项 |
1. A power module comprising:
a power module substrate that has a circuit layer arranged on one surface of an insulating layer; and a semiconductor device that is bonded to one surface of the circuit layer, wherein a copper layer composed of copper or a copper alloy is formed on the surface of the circuit layer to which the semiconductor device is bonded, a solder layer that is formed by using a solder material is formed between the circuit layer and the semiconductor device, an average crystal grain size which is measured by EBSD measurement in a region having a thickness of up to 30 μm from the surface of the circuit layer in the solder layer is within a range of 0.1 to 10 μm, the solder layer has a composition that contains Sn as a main component, 0.01 to 1.0% by mass of Ni, and 0.1 to 5.0% by mass of Cu, and a thermal resistance increase rate when a power cycle is loaded 100,000 times under conditions of a conduction duration of 5 seconds and a temperature difference of 80° C. is less than 10% in a power cycle test. |
地址 |
Tokyo JP |