发明名称 Integrated CMOS/MEMS microphone die components
摘要 A die is manufactured using complementary metal-oxide semiconductor (CMOS) techniques to create transistors, electrical pathways, and microelectromechanical system (MEMS) structures. The MEMS structures include springs, plates, mechanical stops, and structural supports, which can be combined to form complex MEMS structures including microphones, pressure sensors, accelerometers, resonators, gyroscopes, and the like.
申请公布号 US9641950(B2) 申请公布日期 2017.05.02
申请号 US201514707487 申请日期 2015.05.08
申请人 Knowles Electronics, LLC 发明人 Loeppert Peter V.;Lee Sung
分类号 B81B7/00;H04R19/00;H04R19/04;H04R31/00;H04R7/10;B81B3/00 主分类号 B81B7/00
代理机构 Foley & Lardner LLP 代理人 Foley & Lardner LLP
主权项 1. A diaphragm for a CMOS MEMS capacitive microphone die comprising: a first substantially planar metallic layer having a top surface and a bottom surface, where a portion along the perimeter of the first layer defines a first edge of the first layer; a second substantially planar metallic layer having a top surface and a bottom surface, where a portion along the perimeter of the second layer defines a first edge of the second layer,the first edge of the second layer is substantially the same size and shape as the first edge of the first layer, andthe first edge of the second layer is substantially aligned vertically with the first edge of the first layer, except that the first edge of the first layer extends horizontally, with respect to the geometric horizontal center of the first layer, beyond the first edge of the second layer; and a first plurality of vias between the first and second layers, the vias attached to the top surface of the first layer and the bottom surface of the second layer.
地址 Itasca IL US