Light emitting diode structure

摘要

A light-emitting diode structure comprises a first semiconductor layer; a second semiconductor layer under the first semiconductor layer; a light-emitting layer between the first semiconductor layer and the second semiconductor layer for emitting a light; a first electrical pad on the first semiconductor layer for wire bonding; a first extension connecting to the first electrical pad; and a first reflective layer covering the first extension and exposing the first electrical pad, wherein the first electrical pad and the first extension have the same thickness, and the reflectivity of the first reflective layer is higher than that of the first extension.

主权项

1. A light-emitting diode structure, comprising:
a first semiconductor layer having an upper surface, wherein the upper surface comprising a first portion and a second portion; a second semiconductor layer under the first semiconductor layer; a light-emitting layer between the first semiconductor layer and the second semiconductor layer for emitting a light; a first electrical pad on the upper surface of the first semiconductor layer; a first extension connecting to the first electrical pad, covering the first portion of the upper surface and exposing the second portion; and a first reflective layer covering the first extension and exposing the first electrical pad and the second portion, wherein the reflectivity of the first reflective layer is higher than that of the first extension, wherein the first electrical pad and the first extension comprises a same material, and wherein the light-emitting diode structure emits the light from the upper surface.