Integrated circuit with hydrogen absorption structure

摘要

An integrated circuit such as a NAND flash memory includes a dielectric layer overlying transistors (e.g. NAND flash memory cells) that are formed along a surface of a substrate and a hydrogen absorption structure overlying the dielectric layer, the hydrogen absorption structure extending over the transistors, the hydrogen absorption structure being electrically isolated from the transistors.

主权项

1. An integrated circuit comprising:
a substrate; a NAND flash memory cell array formed along a surface of the substrate; a dielectric layer overlying the NAND flash memory cell array; and a hydrogen absorption structure overlying the dielectric layer, the hydrogen absorption structure extending over the NAND flash memory cell array, the hydrogen absorption structure being an electrical conductor substantially surrounded by dielectric material electrically isolated from the NAND flash memory cell array and electrically connected to the substrate.