发明名称 Method for fabrication of an integrated circuit rendering a reverse engineering of the integrated circuit more difficult and corresponding integrated circuit
摘要 An integrated circuit includes a substrate with several functional blocks formed thereon. At least two identical functional blocks are respectively disposed at two or more different locations on the integrated circuit. Electrically inactive dummy modules in the neighborhoods and/or inside of the functional blocks are provided, wherein at least two different electrically inactive dummy modules are includes in the respective neighborhoods and/or inside of the at least two identical functional blocks.
申请公布号 US9640493(B2) 申请公布日期 2017.05.02
申请号 US201514829292 申请日期 2015.08.18
申请人 STMICROELECTRONICS (ROUSSET) SAS 发明人 Fornara Pascal;Rivero Christian;Bouton Guilhem
分类号 H01L23/00;H01L21/768;H01L27/02;G06F17/50 主分类号 H01L23/00
代理机构 Gardere Wynne Sewell LLP 代理人 Gardere Wynne Sewell LLP
主权项 1. A method for fabrication of an integrated circuit, comprising: forming functional blocks in and on a substrate of the integrated circuit, said functional blocks including at least two identical functional blocks respectively disposed at two or more different locations on the integrated circuit; and respectively forming, in the neighborhoods of or inside of the at least two identical functional blocks, electrically inactive dummy modules; and respectively forming, in the neighborhoods of or inside of the at least two identical functional blocks, at least two different electrically inactive dummy modules.
地址 Rousset FR
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