Methods of forming interconnects and semiconductor structures

摘要

A method of activating a metal structure on an intermediate semiconductor device structure toward metal plating. The method comprises providing an intermediate semiconductor device structure comprising at least one first metal structure and at least one second metal structure on a semiconductor substrate. The at least one first metal structure comprises at least one aluminum structure, at least one copper structure, or at least one structure comprising a mixture of aluminum and copper and the at least one second metal structure comprises at least one tungsten structure. One of the at least one first metal structure and the at least one second metal structure is activated toward metal plating without activating the other of the at least one first metal structure and the at least one second metal structure. An intermediate semiconductor device structure is also disclosed.

主权项

1. A method of forming a semiconductor structure, comprising:
selectively forming nickel over a tungsten material on a substrate without forming the nickel over one or more of an aluminum material and a copper material on the substrate; activating the aluminum material or the copper material to nickel plating; and forming nickel over an exposed surface of the aluminum material or the copper material.