Methods for preferential growth of cobalt within substrate features

摘要

Methods for depositing cobalt in features of a substrate include providing a substrate to a process chamber, the substrate having a first surface, a feature formed in the first surface comprising an opening defined by one or more sidewalls, a bottom surface, and upper corners, and the substrate having a first layer formed atop the first surface and the opening, wherein a thickness of the first layer is greater proximate the upper corners of the opening than at the sidewalls and bottom of the opening; exposing the substrate to a plasma formed from a silicon-containing gas to deposit a silicon layer predominantly onto a portion of the first layer atop the first surface of the substrate; and depositing a cobalt layer atop the substrate to fill the opening, wherein the silicon layer inhibits deposition of cobalt on the portion of the first layer atop the first surface of the substrate.

主权项

1. A method of depositing a cobalt layer in features of a substrate, comprising:
providing the substrate to a process chamber, the substrate having a feature formed in a first surface and comprising an opening defined by one or more sidewalls, a bottom, and upper corners, wherein a first layer is formed atop the first surface, the one or more sidewalls, the bottom, and the upper corners, wherein a thickness of the first layer proximate the upper corners is greater than the thickness of the first layer at the sidewalls and bottom, wherein the first layer is one of titanium, tantalum, titanium oxide, tantalum oxide, titanium nitride, or tantalum nitride; exposing the substrate to a plasma formed from a silicon-containing gas to deposit a silicon layer predominantly onto a portion of the first layer that is atop the first surface of the substrate, such that the first layer on the sidewalls and the bottom is not covered by the silicon layer; and depositing the cobalt layer via a chemical vapor deposition process to fill the opening, wherein the silicon layer delays growth of cobalt on the portion of the first layer that is atop the first surface of the substrate relative to a growth of cobalt on the portion of the first layer at the sidewalls and bottom.