发明名称 |
Hybrid multi-junction photovoltaic cells and associated methods |
摘要 |
A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap Group IB-IIIB-VIB2 material solar absorber layer is formed on the back contact layer. A heterojunction partner layer is formed on the low bandgap solar absorber layer, to help form the bottom cell junction, and the heterojunction partner layer includes at least one layer of a high resistivity material having a resistivity of at least 100 ohms-centimeter. The high resistivity material has the formula (Zn and/or Mg)(S, Se, O, and/or OH). A conductive interconnect layer is formed above the heterojunction partner layer, and at least one additional single-junction photovoltaic cell is formed on the conductive interconnect layer, as a top cell. The top cell may have an amorphous Silicon or p-type Cadmium Selenide solar absorber layer. Cadmium Selenide may be converted from n-type to p-type with a chloride doping process. |
申请公布号 |
US9640706(B2) |
申请公布日期 |
2017.05.02 |
申请号 |
US201615137696 |
申请日期 |
2016.04.25 |
申请人 |
ASCENT SOLAR TECHNOLOGIES, INC |
发明人 |
Woods Lawrence M.;Ribelin Rosine M.;Nath Prem |
分类号 |
H01L31/18;H01L31/0725;H01L31/0336;H01L21/385;H01L21/02 |
主分类号 |
H01L31/18 |
代理机构 |
Lathrop & Gage LLP |
代理人 |
Lathrop & Gage LLP |
主权项 |
1. A method of making a photovoltaic device, comprising:
depositing a transparent conductor layer; depositing a heterojunction partner layer; depositing a layer of Cadmium Selenide; coating the layer of Cadmium Selenide with a solution comprising a solvent and at least one of chloride selected from the group consisting of chlorides of Group IA elements, chlorides of group IB elements, and chlorides of Group IIIB elements; heating the layer of Cadmium Selenide in an environment having an ambient temperature of between 300 and 500 degrees Celsius for a time between three and thirty minutes while at least partially preventing the evaporation of Selenium from the layer of Cadmium Selenide; and depositing a contact layer. |
地址 |
Thornton CO US |