发明名称 |
Solar cell and method of fabricating the same |
摘要 |
Disclosed are a solar cell and a method of fabricating the solar cell. The solar cell includes a back electrode layer; a light absorbing layer on the back electrode layer; and a buffer layer on the light absorbing layer, wherein the buffer layer includes a first buffer layer, a second buffer layer on the first buffer layer and a third buffer layer on the second buffer layer, and wherein the first buffer layer includes a group I-VI compound. A method of fabricating a solar cell includes the steps of: forming a back electrode layer on a substrate; forming a light absorbing layer on the back electrode layer; forming a second buffer layer on the light absorbing layer including selenium; and forming a third buffer layer including sulfide on the second buffer layer. |
申请公布号 |
US9640685(B2) |
申请公布日期 |
2017.05.02 |
申请号 |
US201214352385 |
申请日期 |
2012.10.16 |
申请人 |
LG INNOTEK CO., LTD. |
发明人 |
Sung Myoung Seok |
分类号 |
H01L31/0296;H01L31/032;H01L31/0749;H01L31/18 |
主分类号 |
H01L31/0296 |
代理机构 |
Saliwanchik, Lloyd & Eisenschenk |
代理人 |
Saliwanchik, Lloyd & Eisenschenk |
主权项 |
1. A solar cell comprising:
a back electrode layer; a light absorbing layer on the back electrode layer; and a buffer layer on the light absorbing layer; wherein the buffer layer includes a first buffer layer, a second buffer layer on the first buffer layer, and a third buffer layer on the second buffer layer; wherein energy bandgaps sequentially decrease from the third buffer layer to the second buffer layer, wherein energy bandgap of the second buffer layer is about 1.7 eV; wherein energy bandgap of the third buffer layer is about 2.4 eV; wherein a thickness of the first buffer layer is smaller than a thickness of the second buffer layer, and the thickness of the second buffer layer is smaller than a thickness of the third buffer layer; wherein the thickness of the first buffer layer is less than 10 nm, wherein the thickness of the second buffer layer is in a range of 10 nm to 20 nm, wherein the thickness of the third buffer layer is in a range of 30 nm to 40 nm, wherein the first buffer layer includes a group I-VI compound. |
地址 |
Seoul KR |