发明名称 Solar cell and method of fabricating the same
摘要 Disclosed are a solar cell and a method of fabricating the solar cell. The solar cell includes a back electrode layer; a light absorbing layer on the back electrode layer; and a buffer layer on the light absorbing layer, wherein the buffer layer includes a first buffer layer, a second buffer layer on the first buffer layer and a third buffer layer on the second buffer layer, and wherein the first buffer layer includes a group I-VI compound. A method of fabricating a solar cell includes the steps of: forming a back electrode layer on a substrate; forming a light absorbing layer on the back electrode layer; forming a second buffer layer on the light absorbing layer including selenium; and forming a third buffer layer including sulfide on the second buffer layer.
申请公布号 US9640685(B2) 申请公布日期 2017.05.02
申请号 US201214352385 申请日期 2012.10.16
申请人 LG INNOTEK CO., LTD. 发明人 Sung Myoung Seok
分类号 H01L31/0296;H01L31/032;H01L31/0749;H01L31/18 主分类号 H01L31/0296
代理机构 Saliwanchik, Lloyd & Eisenschenk 代理人 Saliwanchik, Lloyd & Eisenschenk
主权项 1. A solar cell comprising: a back electrode layer; a light absorbing layer on the back electrode layer; and a buffer layer on the light absorbing layer; wherein the buffer layer includes a first buffer layer, a second buffer layer on the first buffer layer, and a third buffer layer on the second buffer layer; wherein energy bandgaps sequentially decrease from the third buffer layer to the second buffer layer, wherein energy bandgap of the second buffer layer is about 1.7 eV; wherein energy bandgap of the third buffer layer is about 2.4 eV; wherein a thickness of the first buffer layer is smaller than a thickness of the second buffer layer, and the thickness of the second buffer layer is smaller than a thickness of the third buffer layer; wherein the thickness of the first buffer layer is less than 10 nm, wherein the thickness of the second buffer layer is in a range of 10 nm to 20 nm, wherein the thickness of the third buffer layer is in a range of 30 nm to 40 nm, wherein the first buffer layer includes a group I-VI compound.
地址 Seoul KR