Electronic device, manufacturing method of electronic device, and sputtering target

摘要

A film formation is performed using a target in which a material which is volatilized more easily than gallium when heated at 400° C. to 700° C., such as zinc, is added to gallium oxide by a sputtering method with high mass-productivity which can be applied to a large-area substrate, such as a DC sputtering method or a pulsed DC sputtering method. This film is heated at 400° C. to 700° C., whereby the added material is segregated in the vicinity of a surface of the film. Another portion of the film has a decreased concentration of the added material and a sufficiently high insulating property; therefore, it can be used for a gate insulator of a semiconductor device, or the like.

主权项

1. An electronic device comprising:
a substrate; an oxide film over the substrate; and a semi-conductive oxide film over and in contact with the oxide film, wherein the oxide film comprises at least a first metal element and a second metal element, wherein a portion in contact with the semi-conductive oxide film has higher concentration of the first metal element in the oxide film than a portion facing the substrate, and wherein the portion in contact with the semi-conductive oxide film has lower concentration of the second metal element in the oxide film than the portion facing the substrate.