| 发明名称 |
Semiconductor device with graphene encapsulated metal and method therefor |
| 摘要 |
A method for forming a semiconductor structure includes forming a first metal layer over a first dielectric layer, forming a first graphene layer on at least one major surface of the first metal layer, and forming a second dielectric layer over the first metal layer and the first graphene layer. The method further includes forming an opening in the second dielectric layer which exposes the first metal layer, forming a second metal layer over the second dielectric layer and within the opening, and forming a second graphene layer on at least one major surface of the second metal layer, wherein the second graphene layer is also formed within the opening. |
| 申请公布号 |
US9640430(B2) |
申请公布日期 |
2017.05.02 |
| 申请号 |
US201514856772 |
申请日期 |
2015.09.17 |
| 申请人 |
NXP USA, INC. |
发明人 |
Reber Douglas M.;Shroff Mehul D. |
| 分类号 |
H01L23/48;H01L21/768;H01L21/285;H01L23/532 |
主分类号 |
H01L23/48 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a semiconductor structure, comprising:
forming a first metal layer over a first dielectric layer; forming a first graphene layer on at least one major surface of the first metal layer; forming a second dielectric layer over the first metal layer and the first graphene layer; forming an opening in the second dielectric layer which exposes the first metal layer; forming a second metal layer over the second dielectric layer and within the opening; and forming a second graphene layer on at least one major surface of the second metal layer, wherein the second graphene layer is also formed within the opening. |
| 地址 |
Austin TX US |
