Semiconductor device and method of manufacturing semiconductor device

摘要

An IGBT includes an emitter electrode, base regions, an emitter region, a collector region, a collector electrode, a gate insulating film provided in contact with the silicon carbide semiconductor region, the emitter region, and the base region, and a gate electrode that faces the gate insulating film. A FWD includes a base contact region provided adjacent to the emitter region and electrically connected to the emitter electrode, and a cathode region disposed in the upper layer part on the other main surface side of the silicon carbide semiconductor region, provided adjacent to the collector region, and electrically connected to the collector electrode. The IGBT further includes a reduced carrier-trap region disposed in a principal current-carrying region of the silicon carbide semiconductor region located above the collector region and having a smaller number of carrier traps than the silicon carbide semiconductor region located above the cathode region.

主权项

1. A semiconductor device comprising:
an insulated-gate type bipolar transistor formed in a silicon carbide semiconductor region of a second conductivity type, and a diode connected in inverse-parallel with said insulated-gate type bipolar transistor; said insulated-gate type bipolar transistor including:
an emitter electrode disposed on one main surface of said silicon carbide semiconductor region;a plurality of base regions of a first conductivity type selectively disposed in an upper layer part on a side of said one main surface of said silicon carbide semiconductor region;an emitter region of the second conductivity type selectively disposed in an upper layer part of each of said base regions and electrically connected to said emitter electrode;a collector region of the first conductivity type disposed in an upper layer part on a side of the other main surface of said silicon carbide semiconductor region;a collector electrode disposed on said other main surface of said silicon carbide semiconductor region and electrically connected to said collector region;a gate insulating film disposed in continuous contact with said silicon carbide semiconductor region, said emitter region, and said base regions; anda gate electrode arranged to face said silicon carbide semiconductor region, said emitter region, and said base regions via said gate insulating film, said diode including:
a base contact region of the first conductivity type provided adjacent to said emitter region and electrically connected to said emitter electrode; anda cathode region of the second conductivity type disposed in the upper layer part on the side of said other main surface of said silicon carbide semiconductor region, provided adjacent to said collector region, and electrically connected to said collector electrode, and said insulated-gate type bipolar transistor further including:
a reduced carrier-trap region disposed in a principal current-carrying region of said silicon carbide semiconductor region located above said collector region, and having a smaller number of carrier traps than said silicon carbide semiconductor region located above said cathode region.