High-speed germanium PIN photodiode

摘要

A diode is described which comprises a light-sensitive germanium region (5) located on a waveguide (2) made of silicon or silicon germanium and which has lateral dimensions in a direction transverse to a direction of light propagation in the waveguide that are identical or at most 20 nm per side shorter in comparison with the waveguide.

主权项

1. A diode comprising a light-sensitive germanium region, which is located on a waveguide made of silicon or silicon germanium and which has lateral dimensions in a direction transverse to a direction of light propagation in the waveguide that are identical or at most 20 nm per side shorter in comparison with the waveguide, wherein
in the germanium region, the diode contains a lateral arrangement of an n-doped, an intrinsic and a p-doped germanium region, the p-doped and the n-doped germanium regions each have doping elements extending from a surface of the germanium region to an upper edge of the waveguide and which optionally can be contacted by p- and n-doped waveguide regions of the waveguide located thereunder, and p- and n-doping fronts, separated by the intrinsic region, run parallel opposite each other, additional homogenously doped extensions of silicon or silicon germanium of the same conductive type, extending vertically to at least a level at the same height as the vertically highest point of the germanium region, laterally adjoin either only the p- and n-doped regions in the germanium region, or the p- and n-doped germanium regions, and additionally, if present, the p- and n-doped waveguide regions of the waveguide thereunder.