发明名称 Integrated circuit device, system, and method of fabrication
摘要 A semiconductor device, comprising a first semiconductor portion having a first end, a second end, and a slit portion, wherein the width of the slit portion is less than the width of at least one of the first end and the second end; a second portion that is a different material than the first semiconductor portion, a third portion that is a different material than the first semiconductor portion, wherein the second and third portions are on opposite sides of the slit portion, and at least three terminals selected from a group consisting of a first terminal connected to the first end, a second terminal connected to the second end, a third terminal connected to the second portion, and a fourth terminal connected to the third portion.
申请公布号 US9640653(B2) 申请公布日期 2017.05.02
申请号 US201213561597 申请日期 2012.07.30
申请人 Carnegie Mellon University 发明人 Maly Wojciech P.
分类号 H01L29/66;H01L29/78;H01L27/12;H01L29/06;H01L29/788 主分类号 H01L29/66
代理机构 Fox Rothschild LLP 代理人 Carleton Dennis M.;Fox Rothschild LLP
主权项 1. A semiconductor device defining a top surface and a bottom surface comprising: a semiconductor portion, having a cross-sectional shape in a plane parallel with said top and bottom surfaces of said device which is wider at opposite ends thereof and which taper to a narrower portion between said opposite ends, said narrower portion extending from said top surface to said bottom surface of said device; a first gate connected to said semiconductor portion on one side of said narrower portion, extending from said top surface to said bottom surface of said device; a second gate, discrete from said first gate, said second gate connected to said semiconductor portion at the opposite side of said narrower portion, extending from said top surface to said bottom surface of said device; and at least three metal terminals selected from a group consisting of: a first terminal connected to one wider end of said semiconductor portion;a second terminal connected to the other wider end of said semiconductor portion;a third terminal connected to the first gate; anda fourth terminal connected to the second gate portion; wherein said at least three metal terminals extend from said top surface to said bottom surface of said device such as to allow external electrical contact with any one of said at least three metal terminals from said top surface or said bottom surface of said device.
地址 Pittsburgh PA US