| 发明名称 | Semiconductor device and method for manufacturing the same | ||
| 摘要 | A semiconductor device includes: a substrate; a nitride semiconductor film on the substrate; a schottky electrode on the nitride semiconductor film; a first insulating film on the nitride semiconductor film, contacting at least part of a side surface of the schottky electrode, forming an interface with the nitride semiconductor film and formed of SiN; and a second insulating film covering the schottky electrode and the first insulating film and formed of AlO whose atomic layers are alternately disposed. | ||
| 申请公布号 | US9640647(B2) | 申请公布日期 | 2017.05.02 |
| 申请号 | US201615145048 | 申请日期 | 2016.05.03 |
| 申请人 | Mitsubishi Electric Corporation | 发明人 | Okazaki Hiroyuki;Kurahashi Kenichiro;Koyama Hidetoshi;Kitano Toshiaki;Kamo Yoshitaka |
| 分类号 | H01L29/08;H01L29/778;H01L29/66;H01L29/47;H01L29/40;H01L21/04;H01L21/285 | 主分类号 | H01L29/08 |
| 代理机构 | Studebaker & Brackett PC | 代理人 | Studebaker & Brackett PC |
| 主权项 | 1. A semiconductor device comprising: a substrate; a nitride semiconductor film on the substrate; a schottky electrode on the nitride semiconductor film; a first insulating film on the nitride semiconductor film, contacting at least part of a side surface of the schottky electrode, forming an interface with the nitride semiconductor film and formed of SiN; and a second insulating film covering the schottky electrode and the first insulating film and formed of AlO whose atomic layers are alternately disposed, and further comprising a fifth insulating film inserted between the first insulating film and the second insulating film, wherein a portion of the schottky electrode is disposed on the first and fifth insulating films to form a two-stage gate field plate structure. | ||
| 地址 | Tokyo JP | ||