Bipolar transistor manufacturing method

摘要

A method for manufacturing a bipolar transistor, including the steps of: forming a first surface-doped region of a semiconductor substrate having a semiconductor layer extending thereon with an interposed first insulating layer; forming, at the surface of the device, a stack of a silicon layer and of a second insulating layer; defining a trench crossing the stack and the semiconductor layer opposite to the first doped region, and then an opening in the exposed region of the first insulating layer; forming a single-crystal silicon region in the opening; forming a silicon-germanium region at the surface of single-crystal silicon region, in contact with the remaining regions of the semiconductor layer and of the silicon layer; and forming a second doped region at least in the remaining space of the trench.

主权项

1. A method for forming a bipolar transistor, the method comprising:
forming a first doped region at a top surface of a semiconductor substrate; forming a first semiconductor layer over the top surface of the semiconductor substrate, wherein the first semiconductor layer includes a side surface that is substantially perpendicular to the top surface of the semiconductor substrate; forming a first insulating layer between the first doped region and the first semiconductor layer; forming a stack that includes a second semiconductor layer and a second insulating layer over the first semiconductor layer, wherein the second semiconductor layer includes a side surface that is substantially perpendicular to the top surface of the semiconductor substrate; forming an opening through said stack, said first semiconductor layer, and the first insulating layer above the first doped region; forming a single-crystal silicon region in said opening; forming a silicon-germanium region at a surface of the single-crystal silicon region and in contact with the side surfaces of the first semiconductor layer and of the second semiconductor layer; and forming a second doped region in the opening and over the single-crystal silicon region.