Schottky contact

摘要

The present disclosure relates to a Schottky contact for a semiconductor device. The semiconductor device has a body formed from one or more epitaxial layers, which reside over a substrate. The Schottky contact may include a Schottky layer, a first diffusion barrier layer, and a third layer. The Schottky layer is formed of a first metal and is provided over at least a portion of a first surface of the body. The first diffusion barrier layer is formed of a silicide of the first metal and is provided over the Schottky layer. The third layer is formed of a second metal and is provided over the first diffusion barrier layer. In one embodiment, the first metal is nickel, and as such, the silicide is nickel silicide. Various other layers may be provided between or above the Schottky layer, the first diffusion barrier layer, and the third layer.

主权项

1. A semiconductor device comprising:
a semiconductor body; a Schottky contact comprising:
a Schottky layer comprising a first metal and formed on the semiconductor body;a first diffusion barrier layer formed from a portion of the Schottky layer and comprising a silicide of the first metal and formed on at least a portion of the Schottky layer; anda third layer comprising a second metal and formed on the first diffusion barrier layer, wherein the first metal is nickel and the silicide is nickel silicide.