| 发明名称 | Semiconductor device including magnetically coupled monolithic integrated coils | ||
| 摘要 | A semiconductor device includes a first coil that is monolithically integrated in a first portion of a semiconductor body and that includes a first winding wrapping around a first core structure. A second coil is monolithically integrated in a second portion of the semiconductor body and includes a second winding wrapping around the second core structure. The first and second coils are magnetically coupled with each other. An insulator frame in the semiconductor body surrounds the first portion and excludes the second portion. High dielectric strength between the first and the second coils is achieved without patterning a backside metallization for connecting the turns of the windings and without being restricted to thin substrates. | ||
| 申请公布号 | US9640602(B2) | 申请公布日期 | 2017.05.02 |
| 申请号 | US201213655630 | 申请日期 | 2012.10.19 |
| 申请人 | Infineon Technologies Austria AG | 发明人 | Weyers Joachim;Bueyuektas Kevni;Hirler Franz;Mauder Anton |
| 分类号 | H01L49/02;H01L25/00;H01L23/64;H01F17/00 | 主分类号 | H01L49/02 |
| 代理机构 | Murphy, Bilak & Homiller, PLLC | 代理人 | Murphy, Bilak & Homiller, PLLC |
| 主权项 | 1. A semiconductor device comprising: a first coil monolithically integrated in a first portion of a semiconductor body and including a first winding; a second coil monolithically integrated in a second portion of the semiconductor body and including a second winding, the first and second coils being magnetically coupled with and dielectrically insulated from each other, the first and second portions being arranged side by side in a lateral direction parallel to a main surface of the semiconductor body; and an insulator frame formed in the semiconductor body, surrounding the first portion in the lateral direction and excluding the second portion. | ||
| 地址 | Villach AT | ||