Method of manufacturing a magnetoresistive memory device

摘要

According to one embodiment, a magnetoresistive memory device, includes a metal buffer layer provided on a substrate, a crystalline metal nitride buffer layer provided on the metal buffer layer, and a magnetoresistive element provided on the metal nitride buffer layer. The metal nitride buffer layer and the metal buffer layer contain a same material.

主权项

1. A method of manufacturing a magnetoresistive memory device, the method comprising:
forming a metal buffer layer on a substrate; forming a metal nitride buffer layer on the metal buffer layer by nitriding the metal buffer layer; forming a magnetoresistive element comprising a magnetic layer on the metal nitride buffer layer; and etching the magnetoresistive element selectively up to the metal buffer layer.