Stacked multilayer structure and manufacturing method thereof

摘要

A stacked multilayer structure according to an embodiment of the present invention comprises: a stacked layer part including a plurality of conducting layers and a plurality of insulating layers, said plurality of insulating layers being stacked alternately with each layer of said plurality of conducting layers, one of said plurality of insulating layers being a topmost layer among said plurality of conducting layers and said plurality of insulating layers; and a plurality of contacts, each contact of said plurality of contacts being formed from said topmost layer and each contact of said plurality of contacts being in contact with a respective conducting layer of said plurality of conducting layers, a side surface of each of said plurality of contacts being insulated from said plurality of conducting layers via an insulating film.

主权项

1. A semiconductor memory device comprising:
first and second conductive layers provided above a semiconductor substrate, the second conductive layer being disposed above the first conductive layer; a silicon pillar extending in a first direction crossing to a surface of the semiconductor substrate and facing to the first and second conductive layers; a first contact electrode connected to the first conductive layer; and a second contact electrode connected to the second conductive layer; wherein a cross-sectional dimension of the first contact electrode at an upper surface of the first contact electrode is larger than a cross-sectional dimension of the second contact electrode at an upper surface of the second contact electrode.