发明名称 Porous metallic membrane
摘要 The present disclosure relates to a method of forming a metallic layer having pores extending therethrough, the method comprising the steps of: (a) contacting a cathode substrate with an electrolyte solution comprising at least one cation; reducing the cation to deposit the metallic layer on a surface of the cathode substrate; and (c) generating a plurality of non-conductive regions on the cathode substrate surface during reducing step (b); wherein the deposition of the metallic layer is substantially prevented on the non-conductive regions on the cathode substrate surface to thereby form pores extending through the deposited metallic layer. The present disclosure further provides a metallic porous membrane fabricated by the disclosed process.
申请公布号 US9636639(B2) 申请公布日期 2017.05.02
申请号 US201314654768 申请日期 2013.12.23
申请人 Agency for Science, Technology and Research 发明人 Ansari Kambiz;Chen Shilin;Tan Christina Yuan Ling;Rodriguez Isabel
分类号 B01D39/00;B01D39/14;B01D67/00;B01D71/02;B01D69/06;B01D53/22;B01D61/02;B01D61/14;B01D69/02;B01D69/10;C25D1/08;C25D3/12;C25D5/00;C25D5/02;C25D7/12 主分类号 B01D39/00
代理机构 Schwegman Lundberg & Woessner, P.A. 代理人 Schwegman Lundberg & Woessner, P.A.
主权项 1. A method of forming a metallic layer having pores extending therethrough, the method comprising the steps of: (a) contacting a surface of a cathode substrate with an electrolyte solution comprising at least one cation; (b) reducing said cation to deposit the metallic layer on the surface of said cathode substrate; and (c) generating a plurality of non-conductive regions on the cathode substrate surface during reducing step (b); wherein: the deposition of the metallic layer is substantially prevented on said non-conductive regions on the cathode substrate surface to thereby form pores extending through the deposited metallic layer; and step (c) comprises a step of reducing an electron acceptor species contained within said electrolyte solution to dispose a non-conductive material on the cathode substrate surface to thereby generate said non-conductive regions.
地址 Singapore SG