Method of making high purity polycrystalline aluminum oxynitride bodies useful in semiconductor process chambers

摘要

A method of making high purity crystalline AlON bodies by synthesizing and calcining AlON powders having less than 80 ppm Si, Mg, Ca, Na, and K impurities. The AlON powders are milled to reduce the particle size of the AlON powders using a high purity milling media. An AlON body is formed from the milled AlON powders. Such AlON bodies are particularly suitable for semiconductor process chamber components.

主权项

1. A method of making greater than 99.9% purity crystalline AlON bodies comprising:
Synthesizing and calcining AlON powders having less than 80 ppm of each of the Si, Mg, Ca, Na and K impurities; Milling said AlON powders to reduce the particle size of the said AlON powders using a greater than 99.9% purity milling media; and Forming an AlON body from said milled AlON powders.