Image sensor

摘要

Example embodiments relate to an image sensor supporting a global shutter for minimizing image distortion. An example image sensor includes a semiconductor layer having a first surface and a second surface that are opposite to each other; a photosensitive device, which is formed in the semiconductor layer near the first surface and accumulates charges based on light incident via the second surface; a charge storage device, which is formed in the semiconductor layer near the first surface and temporarily stores charges accumulated by the photosensitive device; a first transmission transistor, which transmits charges accumulated by the photosensitive device to the charge storage device and includes a first gate formed on the first surface of the semiconductor layer; and a leakage photogenerated charge drain region, which is formed in the semiconductor layer near the second surface, is apart from the charge storage device, and is arranged above the charge storage device.

主权项

1. An image sensor comprising:
a semiconductor layer having a first surface and a second surface that are opposite to each other; a photosensitive device in the semiconductor layer near the first surface and that is configured to accumulate charges based on light incident at the second surface; a charge storage device in the semiconductor layer near the first surface and that is configured to temporarily store charges accumulated by the photosensitive device; a first transmission transistor configured to transmit charges accumulated by the photosensitive device to the charge storage device and that includes a first gate on the first surface of the semiconductor layer; and a leakage photogenerated charge drain region in the semiconductor layer near the second surface, apart from the charge storage device, and above the charge storage device.