发明名称 Semiconductor device and operating method thereof
摘要 A semiconductor memory device includes a plurality of memory cell blocks each including a plurality of word lines and suitable for being selectively activated based on an active command and a row address, wherein word lines are selected from the respective activated memory cell blocks based on the active command and the row address, and a column decoding block sequentially accessing the activated memory cell blocks to input/output data thereof by decoding a column address based on the row address.
申请公布号 US9640245(B2) 申请公布日期 2017.05.02
申请号 US201514798176 申请日期 2015.07.13
申请人 SK Hynix Inc. 发明人 Shin Sun-Hye;Park Nak-Kyu
分类号 G11C7/10;G11C11/408;G11C11/4076 主分类号 G11C7/10
代理机构 I P & T Group LLP 代理人 I P & T Group LLP
主权项 1. A semiconductor memory device comprising: a plurality of memory cell blocks each including a plurality of word lines and suitable for being selectively activated based on an active command and a row address, wherein word lines are selected from the respective activated memory cell blocks based on the active command and the row address; and a column decoding block suitable for sequentially accessing the activated memory cell blocks to input/output data thereof, by decoding a column address and the row address, wherein the column decoding block comprises: a column decoding unit suitable for generating column selection signals based on the column address; anda sub-column selection unit suitable for generating sub-column selection signals based on the column selection signals and the row address to sequentially access the activated memory cell blocks.
地址 Gyeonggi-do KR