发明名称 |
Semiconductor device and operating method thereof |
摘要 |
A semiconductor memory device includes a plurality of memory cell blocks each including a plurality of word lines and suitable for being selectively activated based on an active command and a row address, wherein word lines are selected from the respective activated memory cell blocks based on the active command and the row address, and a column decoding block sequentially accessing the activated memory cell blocks to input/output data thereof by decoding a column address based on the row address. |
申请公布号 |
US9640245(B2) |
申请公布日期 |
2017.05.02 |
申请号 |
US201514798176 |
申请日期 |
2015.07.13 |
申请人 |
SK Hynix Inc. |
发明人 |
Shin Sun-Hye;Park Nak-Kyu |
分类号 |
G11C7/10;G11C11/408;G11C11/4076 |
主分类号 |
G11C7/10 |
代理机构 |
I P & T Group LLP |
代理人 |
I P & T Group LLP |
主权项 |
1. A semiconductor memory device comprising:
a plurality of memory cell blocks each including a plurality of word lines and suitable for being selectively activated based on an active command and a row address, wherein word lines are selected from the respective activated memory cell blocks based on the active command and the row address; and a column decoding block suitable for sequentially accessing the activated memory cell blocks to input/output data thereof, by decoding a column address and the row address, wherein the column decoding block comprises:
a column decoding unit suitable for generating column selection signals based on the column address; anda sub-column selection unit suitable for generating sub-column selection signals based on the column selection signals and the row address to sequentially access the activated memory cell blocks. |
地址 |
Gyeonggi-do KR |