Semiconductor device, solid-state image sensor and camera system

摘要

The present invention relates to a semiconductor device, a solid-state image sensor and a camera system capable of reducing the influence of noise at a connection between chips without a special circuit for communication and reducing the cost as a result. The semiconductor device includes: a first chip 11; and a second chip 12, wherein the first chip 11 and the second chip 12 are bonded to have a stacked structure, the first chip 11 has a high-voltage transistor circuit mounted thereon, the second chip 12 has mounted thereon a low-voltage transistor circuit having lower breakdown voltage than the high-voltage transistor circuit, and wiring between the first chip and the second chip is connected through a via formed in the first chip.

主权项

1. A solid-state imaging device comprising:
a pixel array unit including a plurality of pixels that performs photoelectric conversion; a plurality of pads located outside of the pixel array unit; a plurality of vias located at least between the pixel array unit and the plurality of pads, the plurality of vias including a first via and a second via; a first substrate; and a second substrate, wherein,
the pixel array unit is located between the first via and the second via, the first substrate and the second substrate are bonded to have a stacked structure, the first substrate and the second substrate are electrically connected through the plurality of vias, the first substrate includes the pixel array unit and the plurality of vias, and the second substrate includes a plurality of counters and a reference voltage generation circuit.