发明名称 |
Nonvolatile memory device including memory area storing information used for searching erased page, data storage device including the same, and operating method thereof |
摘要 |
A data storage device includes a nonvolatile memory device including: memory cells of a first area grouped by page, and memory cells of a second area respectively corresponding to pages, and suitable for storing information representing whether each page of the first area is in an erased state; and a controller suitable for providing the nonvolatile memory device with a search command for searching an erased page and a search address of a page, wherein the nonvolatile memory device provides the controller with a state of at least one memory cell of the second area corresponding to the search address in response to the search command. |
申请公布号 |
US9640268(B2) |
申请公布日期 |
2017.05.02 |
申请号 |
US201514983350 |
申请日期 |
2015.12.29 |
申请人 |
SK Hynix Inc. |
发明人 |
Yang Chan Woo |
分类号 |
G11C16/04;G11C16/14;G11C11/56;G11C16/26;G11C16/34 |
主分类号 |
G11C16/04 |
代理机构 |
IP & T Group LLP |
代理人 |
IP & T Group LLP |
主权项 |
1. A data storage device comprising:
a nonvolatile memory device including: memory cells of a first area grouped by page, and memory cells of a second area respectively corresponding to pages, and suitable for storing information representing whether each page of the first area is in an erased state; and a controller suitable for providing the nonvolatile memory device with a search command for searching an erased page and a search address of a page, wherein the nonvolatile memory device, in response to the search command, performs a read operation only on the memory cells of the second area corresponding to the search address, and provides the controller with a result of the read operation. |
地址 |
Gyeonggi-do KR |