发明名称 System and method of command based and current limit controlled memory device power up
摘要 Devices and systems for powering up a memory device, for example, are disclosed. One such memory device includes power up circuitry configured to receive an external power supply and to provide an internal power supply to the memory device upon receipt of a command. The power up circuitry may be configured to provide the internal power supply limited to a peak current, or may be configured to provide the internal power supply not limited to a peak current. The memory device may be, for example, a synchronous dynamic random access memory (SDRAM) device or Flash memory.
申请公布号 US9640227(B2) 申请公布日期 2017.05.02
申请号 US201615058009 申请日期 2016.03.01
申请人 Micron Technology, Inc. 发明人 Pekny Ted;Yu Jeff
分类号 G11C5/14;G11C7/20 主分类号 G11C5/14
代理机构 Fletcher Yoder, P.C. 代理人 Fletcher Yoder, P.C.
主权项 1. A memory device comprising: power up circuitry disposed internal to the memory device and configured to receive an external power supply and to provide an internal power supply limited to a peak current to the memory device.
地址 Boise ID US
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