Advanced metal-to-metal direct bonding

摘要

A first semiconductor structure having a first metallic structure that has a convex outermost surface and a second semiconductor structure having a second metallic structure that has a concave outermost surface are first provided. The first and second metallic structures are provided utilizing liner systems that have an opposite galvanic reaction to the metal or metal alloy that constitutes the first and second metallic structures such that during a planarization process the metal liners have a different removal rate than the metal or metal alloy that constitutes the first and second metallic structures. The first semiconductor structure and the second semiconductor structure are then bonded together such that the convex outermost surface of the first metallic structure is in direct contact with the concave outermost surface of the second metallic structure.

主权项

1. A three-dimensional (3D) bonded semiconductor structure comprising:
a first semiconductor structure comprising a first dielectric material layer, wherein the first dielectric material layer comprises at least a first U-shaped metal liner lining a first opening present in the first dielectric material layer and a first metallic structure having a convex outermost surface present in the first opening and in direct contact with the first U-shaped metal liner; and a second semiconductor structure comprising a second dielectric material layer, wherein the second dielectric material layer comprises at least a second U-shaped metal liner lining a second opening present in the second dielectric material layer and a second metallic structure having a concave outermost surface present in the second opening and in direct contact with the second U-shaped metal liner, wherein a metal-to-metal bonding interface is present between the convex outermost surface of the first metallic structure and the concave outermost surface of the second metallic structure.