| 发明名称 | Electrostatic discharge protection device with parasitic bipolar junction transistors | ||
| 摘要 | An electrostatic discharge (ESD) protection device includes a first trigger element and a first silicon control rectifier (SCR) element. The first trigger element has a first parasitic bipolar junction transistor (BJT) formed in a substrate. The first SCR element has a second parasitic BJT formed in the substrate. The first parasitic BJT and the second parasitic BJT has a common parasitic bipolar base, and the first parasitic BJT has a trigger voltage substantially lower than that of the second parasitic BJT. | ||
| 申请公布号 | US9640527(B2) | 申请公布日期 | 2017.05.02 |
| 申请号 | US201514728053 | 申请日期 | 2015.06.02 |
| 申请人 | UNITED MICROELECTRONICS CORP. | 发明人 | Lin Ya-Ting;Chen Yi-Chun;Tang Tien-Hao |
| 分类号 | H01L21/8234;H01L23/58;H01L27/02 | 主分类号 | H01L21/8234 |
| 代理机构 | WPAT, PC | 代理人 | WPAT, PC ;King Justin |
| 主权项 | 1. An electrostatic discharge protection device, comprising: a first trigger element, having a first parasitic bipolar junction transistor (BJT) formed in a substrate and electrically connected to an input/output pad; and a first silicon control rectifier (SCR) element, having a second parasitic BJT formed in the substrate; wherein the first parasitic BJT and the second parasitic BJT has a common parasitic bipolar base, and the first parasitic BJT has a trigger voltage substantially lower than that of the second parasitic BJT. | ||
| 地址 | Hsinchu TW | ||