发明名称 Semiconductor device having wiring pad and wiring formed on the same wiring layer
摘要 Disclosed herein is a device that includes a first wiring provided as a first-level wiring layer and elongated in a first direction; and a first wiring pad provided as the first-level wiring layer, the first wiring pad being rectangular and including a first side edge that is elongated in the first direction and a second side edge that is elongated in a second direction crossing to the first direction, the first side edge being greater in length than the second side edge, the first wiring pad being greater in length in the second direction than the first wiring.
申请公布号 US9640462(B2) 申请公布日期 2017.05.02
申请号 US201213683085 申请日期 2012.11.21
申请人 Longitude Semiconductor S.A.R.L. 发明人 Wada Shoji
分类号 H01L23/48;H01L23/00 主分类号 H01L23/48
代理机构 代理人
主权项 1. A device comprising: a semiconductor substrate; a plurality of penetration electrodes penetrating through the semiconductor substrate, each one of the plurality of penetration electrodes including a plurality of wiring pads, each of the wiring pads vertically aligned with and electrically connected to a front side bump and to an associated conductive body part; and a horizontally elongated wiring elongated in a horizontal direction and electrically connected to one of the wiring pads, wherein a shape in plan view of at least one of the wiring pads is configured to be elongated in a first direction substantially parallel to the horizontal direction of the horizontally elongated wiring, to have in plan view, a first width in the first direction and a second width in a second direction crossing to the first direction, the first width being larger than the second width.
地址 Luxembourg LU