Pattern formation method

摘要

According to one embodiment, a pattern formation method includes forming a resist pattern on an underlying film, slimming the resist pattern, forming a pinning portion having affinity for a first polymer by depositing, on a surface of the slimmed resist pattern, an etching product produced by etching the underlying film, forming a neutral, film having affinity for the first polymer and a second polymer on the underlying film after the etching, forming a block copolymer film containing the first polymer and the second polymer on the pinning portion and the neutral film, forming a microphase separation pattern by applying a predetermined process to the block copolymer film to perform microphase separation.

主权项

1. A pattern formation method comprising:
forming a resist pattern on an underlying film; forming a pinning portion having affinity for a first polymer by slimming the resist pattern; forming a neutral film having affinity for the first polymer and a second polymer on a part of the underlying film which is not covered by the slimmed resist pattern; forming a block copolymer film containing the first polymer and the second polymer on the pinning portion and the neutral film; forming a microphase separation pattern by applying a predetermined process to the block copolymer film to perform microphase separation, the microphase separation pattern having a structure in which a first portion formed of the first polymer and a second portion formed of the second polymer are arranged; removing one of the first portion and the second portion; and etching the underlying film before slimming the resist pattern.