| 发明名称 |
Method for forming insulating film and method for manufacturing semiconductor device |
| 摘要 |
In a method for forming a fluorocarbon-based insulating film to be in contact with a metal, a microwave is irradiated to the metal to which moisture is adhered in a hydrogen-containing atmosphere. Then plasma CVD using a fluorocarbon-based gas is performed on the metal to which the microwave is irradiated to form the insulating film. |
| 申请公布号 |
US9640388(B2) |
申请公布日期 |
2017.05.02 |
| 申请号 |
US201615043242 |
申请日期 |
2016.02.12 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
Kasai Shigeru;Miyatani Kotaro;Kurotori Takuya;Kote Kenichi;Fujino Yutaka;Tanihara Akira;Kawamura Kohei |
| 分类号 |
H01L21/00;H01L21/02 |
主分类号 |
H01L21/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a fluorocarbon-based insulating film in contact with a metal, the method comprising:
removing moisture adhering to the metal by irradiating microwave to the metal in a hydrogen-containing atmosphere; and performing plasma chemical vapor deposition (CVD) using a fluorocarbon-based gas on the metal to which the microwave is irradiated to form the fluorocarbon-based insulating film. |
| 地址 |
Tokyo JP |
