发明名称 Substrate processing apparatus and substrate processing method
摘要 In a substrate processing apparatus, with an internal space of a chamber brought into a reduced pressure atmosphere, a first processing liquid is supplied onto an upper surface of a substrate while the substrate is rotated, and the first processing liquid is thereby quickly spread from a center portion toward a peripheral portion on the upper surface of the substrate. It is thereby possible to coat the upper surface of the substrate with the first processing liquid in a shorter time as compared with under normal pressure. Further, by sucking the first processing liquid from the vicinity of an edge of the substrate, it is possible to coat the upper surface of the substrate with the first processing liquid in a still shorter time. As a result, it is possible to shorten the time required for the processing of the substrate.
申请公布号 US9640382(B2) 申请公布日期 2017.05.02
申请号 US201514854949 申请日期 2015.09.15
申请人 SCREEN HOLDINGS CO., LTD. 发明人 Masuhara Hirofumi;Arai Kenichiro;Miyagi Masahiro;Endo Toru
分类号 B44C1/22;C03C15/00;C03C25/68;C23F1/00;H01L21/02;H01L21/67;H01L21/306 主分类号 B44C1/22
代理机构 McDermott Will & Emery LLP 代理人 McDermott Will & Emery LLP
主权项 1. A substrate processing method of processing a substrate, comprising the steps of: a) holding a substrate with a main surface thereof directed upward in an internal space of a chamber and forming a pattern on said main surface of said substrate; b) bringing said internal space of said chamber into a reduced pressure atmosphere and supplying a processing liquid onto a center portion of said main surface of said substrate while rotating said substrate in said reduced pressure atmosphere, to thereby coat said main surface of said substrate with said processing liquid; and c) increasing pressure in said internal space of said chamber and continuously supplying said processing liquid onto said main surface of said substrate coated with said processing liquid while rotating said substrate, to thereby perform a predetermined processing after said step b), wherein the number of revolutions of said substrate in said step c) is smaller than that of said substrate in said step b).
地址 Kyoto JP