发明名称 |
Bismuth oxide-based addictive for laser marking |
摘要 |
The present invention is directed to a bismuth oxide-based additive for laser marking containing oxygen-deficient bismuth oxide represented by the general formula: Bi2O(3-x) (provided that x is 0.01 or more and 0.3 or less and x represents the amount of oxygen deficiency calculated according to the formula: x=3−O1s/Bi4f×2 from the ratio (O1s/Bi4f) of the peak area attributed to the 1s electrons of oxygen bonded to bismuth to the peak area attributed to the 4f electrons of bismuth obtained by X-ray photoelectron spectrometry), which enables marking with excellent blackness and contrast without causing undesirable coloration of a resin composition regardless of the type or shape of a resin to be used. |
申请公布号 |
US9637651(B2) |
申请公布日期 |
2017.05.02 |
申请号 |
US201414892577 |
申请日期 |
2014.04.17 |
申请人 |
TOKAN MATERIAL TECHNOLOGY CO., LTD. |
发明人 |
Matoda Tatsuo;Suzuki Shigeru;Shinchi Taketo;Ishiko Akira |
分类号 |
B32B3/02;C09D11/037;B23K26/18;C01G29/00;C09C1/00;B23K26/00;B23K26/402 |
主分类号 |
B32B3/02 |
代理机构 |
Mori & Ward, LLP |
代理人 |
Mori & Ward, LLP |
主权项 |
1. An additive for laser marking, comprising oxygen-deficient bismuth oxide represented by the general formula: Bi2O(3-x) (provided that x is 0.01 or more and 0.3 or less), wherein in the general formula, x represents the amount of oxygen deficiency calculated according to the following formula (1) from the ratio (O1s/Bi4f) of the peak area attributed to the 1s electrons of oxygen bonded to bismuth to the peak area attributed to the 4f electrons of bismuth obtained by X-ray photoelectron spectrometry:
x=3−O1s/Bi4f×2 (1). |
地址 |
Osaka-Shi JP |