发明名称 |
CURRENT SENSE ACCURACY IMPROVEMENT FOR MOSFET RDS (ON) SENSE BASED VOLTAGE REGULATOR BY ADAPTIVE TEMPERATURE COMPENSATION |
摘要 |
An information handling system (IHS) includes temperature-compensated power control by a voltage regulation (VR) module to: (i) receive a monitored current (Imon) value from a current sensor integrated into the VR module; (ii) receive a temperature value from the temperature sensor also integrated into the VR module; (iii) determine a temperature-compensated Imon value based at least in part on the Imon value, the temperature value, and an empirically-derived temperature coefficient defined at the Imon value and the temperature value; and (iv) control the voltage-regulated power at least in part based on the temperature-compensated Imon value. The empirically-derived temperature coefficient adjusts for nonlinear portions of temperature coupling relationship between a portion of an integrated circuit (IC) die that can include the current sensor and the temperature sensor and a temperature experienced by by active portion of VR module. |
申请公布号 |
US2017115725(A1) |
申请公布日期 |
2017.04.27 |
申请号 |
US201514924644 |
申请日期 |
2015.10.27 |
申请人 |
DELL PRODUCTS, L.P. |
发明人 |
LUO SHIGUO;ZHANG KEJIU;WU FENG=YU |
分类号 |
G06F1/32;G06F1/20 |
主分类号 |
G06F1/32 |
代理机构 |
|
代理人 |
|
主权项 |
1. An Information Handling System (IHS) having temperature-compensated power control, the IHS comprising:
a computing component; a voltage regulation (VR) module comprising:
an integrated circuit die;a power stage component contained in the integrated circuit die and comprising a high side driver and a low side driver both electrically connected to power the computing component with voltage-regulated power;a current sensor contained in the integrated circuit die to measure a monitored current (Imon) value of the voltage-regulated power; anda temperature sensor contained in the integrated circuit die to measure a temperature value at one location of the integrated circuit die, wherein a temperature value sensed at the location has a nonlinear temperature coefficient relationship with a second temperature of the high side driver; and a VR controller in communication with the current sensor and the temperature sensor and which executes instructions that configure the VR controller to:
receive the Imon value from the current sensor;receive the temperature value from the temperature sensor;determine a temperature-compensated Imon value based at least in part on the Imon value, the temperature value, and an empirically-derived temperature coefficient defined at the Imon value and the temperature value; andcontrol the voltage-regulated power at least in part based on the temperature-compensated Imon value. |
地址 |
ROUND ROCK TX US |