RRAM DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

An RRAM device is provided, which includes a bottom electrode in an oxide layer, a plurality of dielectric protrusions on the oxide layer, wherein the bottom electrode is disposed between the two adjacent dielectric protrusions. A resistive switching layer is conformally disposed on the dielectric protrusions, the oxide layer, and the bottom electrode. A conductive oxygen reservoir layer is disposed on the resistive switching layer, and an oxygen diffusion barrier layer is disposed on the conductive oxygen reservoir layer.

主权项

1. An RRAM device, comprising:
a bottom electrode in an oxide layer; a plurality of dielectric protrusions on the oxide layer, wherein the bottom electrode is disposed between two adjacent dielectric protrusions; a resistive switching layer conformally disposed on the dielectric protrusions, the oxide layer, and the bottom electrode; a conductive oxygen reservoir layer disposed on the resistive switching layer; and an oxygen diffusion barrier layer disposed on the conductive oxygen reservoir layer.