发明名称 |
INTEGRATED CIRCUIT AND PROCESS THEREOF |
摘要 |
An integrated circuit process includes the following steps. A substrate including a first area and a second area is provided. A plurality of line patterns cover the substrate of the first area, and a sacrificial line pattern covers the substrate of the second area, wherein these line patterns separate from and are orthogonal to the sacrificial line pattern. The present invention also provides an integrated circuit formed by said process. A substrate includes a first area and a second area; a plurality of line patterns cover the substrate of the first area; a slot pattern is in the substrate of the second area, wherein these line patterns are orthogonal to the slot pattern. Additionally, a plurality of line patterns cover the substrate; a sacrificial line pattern is at ends of the line patterns, wherein these line patterns separate from and are orthogonal to the sacrificial line pattern. |
申请公布号 |
US2017117151(A1) |
申请公布日期 |
2017.04.27 |
申请号 |
US201514945443 |
申请日期 |
2015.11.19 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Liou En-Chiuan;Yang Chih-Wei;Hung Kuei-Chun |
分类号 |
H01L21/033;H01L27/02 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
1. An integrated circuit process, comprising:
providing a substrate comprising a first area and a second area; and forming a plurality of line patterns covering the substrate of the first area, and a sacrificial line pattern covering the substrate of the second area, wherein the line patterns are separated from the sacrificial line pattern, the line patterns are orthogonal to the sacrificial line pattern, and the sacrificial line pattern has a minimum width larger than a minimum width of the line patterns. |
地址 |
Hsin-Chu City TW |