发明名称 METHOD OF FORMING NON-CONTINUOUS LINE PATTERN AND NON-CONTINUOUS LINE PATTERN STRUCTURE
摘要 A method of forming a non-continuous line pattern includes forming a DSA material layer on a substrate, performing a phase separation of the DSA material layer to form an ordered periodic pattern including a plurality of first polymer structures and the second polymer structures arranged alternately, forming a first mask to cover a first portion of the ordered periodic pattern, performing a first etching process to remove a portion of the first polymer structures exposed by the first mask, removing the first mask, forming a second mask to cover a second portion of the ordered periodic pattern, with an interval to the first portion of the ordered periodic pattern, performing a second etching process to remove a portion of the second polymer structures exposed by the second mask, and removing the second mask. The remaining first polymer structures and the remaining second polymer structures are not connected to each other.
申请公布号 US2017117149(A1) 申请公布日期 2017.04.27
申请号 US201715399715 申请日期 2017.01.05
申请人 UNITED MICROELECTRONICS CORP. 发明人 Chen Yu-Te;Liou En-Chiuan;Tseng Chia-Hsun;Su Shin-Feng;Hung Yu-Ting;Tsai Meng-Lin
分类号 H01L21/033;H01L21/311;H01L21/768;H01L21/027 主分类号 H01L21/033
代理机构 代理人
主权项 1. A method of forming a non-continuous line pattern, comprising: providing a substrate; forming a directed self-assembly (DSA) material layer on the substrate; performing a phase separation process of the DSA material layer to form an ordered periodic pattern that includes a plurality of first polymer structures and a plurality of second polymer structures arranged alternately; forming a first mask to cover a first portion of the ordered periodic pattern; performing a first etching process to remove a portion of the first polymer structures exposed by the first mask; removing the first mask; forming a second mask to cover a second portion of the ordered periodic pattern, wherein an interval exits between adjacent boundaries of the second portion and the first portion of the ordered periodic pattern; performing a second etching process to remove a portion of the second polymer structures exposed by the second mask; and removing the second mask, wherein the remaining first polymer structures and the remaining second polymer structures are not connected to each other.
地址 Hsinchu City TW