PROCESS OF FORMING NITRIDE SEMICONDUCTOR DEVICE

摘要

A process of forming a nitride semiconductor device is disclosed. The process includes steps of (a) implanting impurities into a portion of nitride semiconductor layers epitaxially grown on a substrate; (b) forming a silicon nitride (SiN) film on the nitride semiconductor layers; and (c) annealing the nitride semiconductor layers for activating the implanted impurities as covering the nitride semiconductor layers by the SiN film. The process has a feature that the SiN film shows, in a Fourier Transformation Infrared (FT-IR) spectroscopy measured before the step of annealing, absorbance peaks attributed to translational motions of a Si—H bond and an N—H bond at most 1/30 of an absorbance peak attributed to a SiN bond.

主权项

1. A process of producing a semiconductor device, comprising steps of:
implanting impurities into a portion of nitride semiconductor layers that are epitaxially and sequentially grown on a substrate, that implantation of the impurities forming implanted regions within the nitride semiconductor layers; forming a silicon nitride (SiN) film on the nitride semiconductor layers; and annealing the nitride semiconductor layers and the substrate for activating the implanted impurities as covering the nitride semiconductor layer by the SiN film, wherein the SiN film shows, in a Fourier Transformation Infrared (FT-IR) spectroscopy measured before the step of annealing, absorbance peaks attributed to translational motions of a Si—H bond and an N—H bond at most 1/30 of an absorbance peak attributed to the translation motion of a Si—N bond.