SENSE PATH CIRCUITRY SUITABLE FOR MAGNETIC TUNNEL JUNCTION MEMORIES

摘要

A memory includes a first memory cell; and a second memory cell. A selectable current path is coupled between the first memory cell and the second memory cell. The selectable current path includes a first transistor. A first amplifier is coupled in a first feedback arrangement between the first memory cell and the first transistor. During a read operation of the first memory cell, a current through the first memory cell is substantially equal to a current through the second memory cell. The memory cell may include a magnetic tunnel junction (MTJ).

主权项

1. A memory comprising:
a first memory element; a first read transistor having a first current electrode coupled to receive a reference current during a read operation of the memory, a second current electrode coupled to the first memory element, and a control electrode; and a first feedback transistor having a first current electrode coupled to provide a feedback path to the control electrode of the first read transistor, a second current electrode coupled to the first memory element, and a control electrode for receiving a first decode signal.