发明名称 Display Device, COA Substrate And Manufacturing Method For The Same
摘要 A COA substrate manufacturing method including: forming a TFT on a base substrate; forming a second insulation layer on the TFT; forming a color resist layer on the second insulation layer; forming a third insulation layer on the color resist layer; forming a through hole which reveals the drain electrode of the TFT; forming an ITO film layer on the third insulation layer; forming a photoresist layer on the ITO film layer; performing a light-shielding process to the photoresist layer on the vias-region ITO film layer and an exposure process to the photoresist layer on the non vias-region ITO film layer; developing the photoresist layer on the vias-region ITO and the non vias-region ITO film layers to obtain a photoresist layer plug covered on the vias-region ITO film layer. The present invention utilizes the photoresist to fill the through hole which can improve the quality of a display device.
申请公布号 US2017115517(A1) 申请公布日期 2017.04.27
申请号 US201514908080 申请日期 2015.12.28
申请人 Shenzhen China Star Optoelectronics Technology Co. Ltd. 发明人 WU Yue
分类号 G02F1/1368;H01L21/311;H01L21/3213;H01L27/12;H01L21/027 主分类号 G02F1/1368
代理机构 代理人
主权项 1. A Color Filter on Array (COA) substrate manufacturing method comprising: forming a thin-film transistor on a base substrate, wherein the thin-film transistor includes a first metal layer on the base substrate, a first insulation layer disposed on the first metal layer, a semiconductor active layer disposed on the first insulation layer, and a second metal layer disposed on the semiconductor active layer, wherein the second metal layer forms a drain electrode of the thin-film transistor; forming a second insulation layer on the thin-film transistor; forming a color resist layer on the second insulation layer; forming a third insulation layer on the color resist layer; forming at least one through hole which exposes the drain electrode of the thin-film transistor, and sequentially passes through the third insulation layer, the color resist layer and the second insulation layer; wherein, the method further comprises: forming an ITO film layer on the third insulation layer, wherein, the ITO film layer includes a vias-region ITO film layer located on and attached in the through hole and a non vais-region ITO film layer located outside the through hole; forming a photoresist layer on the ITO film layer; performing a light-shielding process to the photoresist layer located only on the vias-region ITO film layer, and performing an exposure process to the photoresist layer on the non vias-region ITO film layer; and developing the photoresist layer on the vias-region ITO film layer and the photoresist layer on the non vias-region ITO film layer in order to obtain a photoresist layer plug only covered on the vias-region ITO film layer.
地址 Shenzhen, Guangdong CN