BACK-SIDE ILLUMINATED (BSI) IMAGE SENSOR WITH GLOBAL SHUTTER SCHEME

摘要

In some embodiments, the present disclosure relates to a back-side image (BSI) sensor having a global shutter pixel with a reflective material that prevents contamination of a pixel-level memory node. In some embodiments, the BSI image sensor has an image sensing element arranged within a semiconductor substrate and a pixel-level memory node arranged within the semiconductor substrate at a location laterally offset from the image sensing element. A reflective material is also arranged within the semiconductor substrate at a location between the pixel-level memory node and a back-side of the semiconductor substrate. The reflective material has an aperture that overlies the image sensing element. The reflective material allows incident radiation to reach the image sensing element while preventing the incident radiation from reaching the pixel-level memory node, thereby preventing contamination of the pixel-level memory node.

主权项

1. A back-side illuminated (BSI) image sensor, comprising:
an image sensing element arranged within a semiconductor substrate; a pixel-level memory node arranged within the semiconductor substrate at a location laterally offset from the image sensing element; and a reflective material arranged within the semiconductor substrate at a location between the pixel-level memory node and a plane extending along a back-side of the semiconductor substrate and having an aperture that overlies the image sensing element.