发明名称 ELECTRONIC DEVICE FOR DETECTION OF VIRUSES, BACTERIA, AND PATHOGENS
摘要 This invention relates to identification of organic or nonorganic molecules dissolved in liquid solutions based on their internal dipole moment. These molecules include and are not limited to viruses, microbes, bacteria, and in general pathogens. The liquid solution provides a specific dielectric constant, which is directly related to the internal dipole moment of the dissolved pathogen. An electronic device namely PtSi-Porous Si schottky junction is proposed as the pathogen detector. This device, which is made of PtSi alloy covering the pores of an n-type Silicon substrate, is a sensitive indicator of the dielectric constant of the material filling its pores. In particular, such a device has a unique reverse biased current-voltage (IV) relation that is sensitive to changes in electric fields around its surface, which change its breakdown voltage. The change caused in the breakdown voltage due to a pathogen dissolved in a liquid solution can be traced back to the dipole moment of the pathogen and used to identify it. Furthermore, application of a frequency varying ac signal to the device can help distinguish molecules with identical dipole moments. Each pathogen exhibits a frequency at which a sudden change in its characteristics occurs. This change in the characteristics causes an abrupt change in the breakdown voltage. The frequency at which the breakdown voltage changes is then used to identify the pathogen.
申请公布号 US2017115252(A1) 申请公布日期 2017.04.27
申请号 US201715398644 申请日期 2017.01.04
申请人 Raissi Farshid 发明人 Raissi Farshid
分类号 G01N27/92;G01N33/487 主分类号 G01N27/92
代理机构 代理人
主权项 1. An electronic device for identifying molecules comprising: a metal semiconductor schottky contact having a porous surface; wherein the porous surface is comprised of a plurality of sharp edges, an electric field at one or more of the plurality of sharp edges is affected by one or more types of molecules in a material poured on the porous surface; and the effect on the electric field causes a change in a breakdown voltage of the electronic device.
地址 Tehran IR
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